high-power density 2w laser diode description the sld324zt is a gain-guided, high-power density laser diode with a built-in te cooler. a new flat, square package with a low thermal resistance and an in-line pin configuration is employed. fine tuning of the wavelength is possible by controlling the laser chip temperature. features high power recommended optical power output: po = 2.0w low operating current: iop = 2.5a (po = 2.0w) newly developed flat package with built-in photodiode, te cooler and thermistor applications solid state laser excitation medical use material processes measurement structure gaalas quantum well structure laser diode operating lifetime mttf 10,000h (effective value) at po = 2.0w, tth = 25? absolute maximum ratings (tth = 25?) optical power output po 2.2 w reverse voltage v r ld 2 v pd 15 v operating temperature (tth) topr ?0 to +30 ? storage temperature tstg ?0 to +85 ? operating current of te cooler i t 4.0 a ?1 e93322c08-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. sld324zt t h ld te cooler pd 5 6 1 2 11 12 7 8 9 10 3 4 112 no. 1 2 3 4 5 6 function te cooler (negative) te cooler (negative) thermistor thermistor ld (anode) ld (anode) no. 7 8 9 10 11 12 function ld (cathode) ld (cathode) pd (cathode) pd (anode) te cooler (positive) te cooler (positive) equivalent circuit pin configuration (top view) warranty this warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. sony quality assurance department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of sony, the product shall be replaced free of charge. laser diodes naturally have differing lifetimes which follow a weibull distribution. special warranties are also available.
2 sld324zt electrical and optical characteristics (tth: thermistor temperature, tth = 25 c) handling precautions eye protection against laser beams the optical output of laser diodes ranges from several mw to 3w. however the optical power density of the laser beam at the diode chip reaches 1mw/cm 2 . unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. for observing laser beams, always use safety goggles that block infrared rays. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. item symbol conditions min. typ. max. unit ith iop vop p imon ? // ? x, ? y ?? d rth threshold current operating current operating voltage wavelength ? 1 monitor current radiation angle (f. w. h. m. ? ) positional accuracy differential efficiency thermistor resistance p o = 2.0w p o = 2.0w p o = 2.0w p o = 2.0w v r = 10v p o = 2.0w p o = 2.0w p o = 2.0w tth = 25 c 790 0.15 20 4 0.65 0.6 2.5 2.2 0.8 30 9 1.0 10 1.0 3.5 3.0 840 3.0 40 17 100 3 a a v nm ma degree degree m degree w/a k ? perpendicular parallel position angle ? 1 wavelength selection classification type sld324zt-1 sld324zt-2 sld324zt-3 wavelength (nm) 795 5 810 10 830 10 type SLD324ZT-21 sld324zt-24 sld324zt-25 wavelength (nm) 798 3 807 3 810 3 a p c a t c safety goggles for protection from laser beam ir fluorescent plate optical material optical power output control device temperature control device lens laser diode optical boad ? f. w. h. m. : full width at half maximum
3 sld324zt example of representative characteristics optical power output vs. forward current characteristics i f forward current [a] 0 0.5 1.5 1 2 2.5 3 3.5 0.5 0 1 1.5 2.5 2 3 po optical power output [w] optical power output vs. monitor current characteristics imon monitor current [ma] 01 0.5 0 1 2 0.5 1.5 2.5 po optical power output [w] threshold current vs. temperature characteristics tth thermistor temperature [ c] 10 0 10 20 30 0.1 1 ith threshold current [a] dependence of wavelength tth thermistor temperature [ c] 100 102030 780 830 820 810 800 790 p wavelength [nm] power dependence of far field pattern (parallel to junction) angle [degree] 90 60 300 306090 radiation intensity (optional scale) power dependence of far field pattern (perpendicular to junction) angle [degree] 90 60 30 0 30 60 90 radiation intensity (optional scale) tth = 10 c tth = 0 c tth = 25 c tth = 30 c tth = 15 c tth = 10 c tth = 0 c tth = 25 c tth = 30 c tth = 15 c p o = 2.0w tth = 25 c p o = 1.5w p o = 1.0w p o = 0.5w tth = 25 c p o = 2.0w p o = 2.0w p o = 1.5w p o = 1.0w p o = 0.5w
4 sld324zt 0 0.5 1.5 1 d differential efficiency [mw/ma] differential efficiency vs. temperature characteristics tth termistor temperature [ c] 100 102030 00 5 10 15 10 20 40 30 q absorbed heat [w] v t pin voltage [v] te cooler characteristics 1 ? t temperature difference [ c] ? t: tc tth tth: thermistor temperature tc: case temperature 0 20406080100 00 5 10 15 10 20 40 30 q absorbed heat [w] v t pin voltage [v] te cooler characteristics 2 ? t temperature difference [ c] 0 20406080100 1 5 10 50 rth thermister resistance [k ? ] termistor chacteristics tth termistor temperature [ c] 100 10203040506070 tc = 32 c i t = 4a 3a 2a ? t vs v tth = 25 c i t = 4a 3a 3a 2a 2a ? t vs v ? t vs q 4a 3a 2a ? t vs q 4a te cooler characteristics
5 sld324zt wavelength [nm] 790 0.00 1.00 800 relative radiant intensity tth = 25 c po = 0.8w wavelength [nm] 790 0.00 1.00 800 relative radiant intensity tth = 25 c po = 1.6w wavelength [nm] 790 0.00 1.00 800 relative radiant intensity tth = 25 c po = 1.2w wavelength [nm] 790 0.00 1.00 800 relative radiant intensity tth = 25 c po = 2.0w power dependence of spectrum
6 sld324zt wavelength [nm] 0.00 1.00 810 780 relative radiant intensity tth = 10 c wavelength [nm] 0.00 1.00 810 780 relative radiant intensity tth = 0 c wavelength [nm] 0.00 1.00 810 780 relative radiant intensity tth = 25 c wavelength [nm] 0.00 1.00 810 780 relative radiant intensity tth = 30 c temperature dependence of spectrum (po = 2w)
7 sld324zt package outline unit: mm sony code eiaj code jedec code package mass 118 g m-272 window glass ? 10.0 0.1 18.0 36.0 0.5 20.0 0.05 8.0 0.5 5.0 41.0 0.05 + 0.06 4 3.0 0 12.35 0.8 max 46.0 0.5 23.0 36.0 0.5 ld chip ? 20.5 0.1 3.0 9.0 0.2 13.05 0.1 2.54 12 0.64 reference plane m-272 ? distance between pilot hole and emitting area. sony corporation
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